发明申请
- 专利标题： Antireflection film composition and patterning process using the same
- 专利标题（中）： 防反射膜组合物和使用其的图案化工艺
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申请号： US12071804申请日： 2008-02-26
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公开(公告)号： US20080220381A1公开(公告)日： 2008-09-11
- 发明人: Jun Hatakeyama , Kazumi Noda , Seiichiro Tachibana , Takeshi Kinsho , Tsutomu Ogihara
- 申请人： Jun Hatakeyama , Kazumi Noda , Seiichiro Tachibana , Takeshi Kinsho , Tsutomu Ogihara
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-060010 20070309
- 主分类号： G03F7/30
- IPC分类号： G03F7/30 ; G03F5/00
摘要：
An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided.The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (1).