发明申请
- 专利标题： Silicon carbide semiconductor device
- 专利标题（中）： 碳化硅半导体器件
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申请号： US12073837申请日： 2008-03-11
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公开(公告)号： US20080224150A1公开(公告)日： 2008-09-18
- 发明人: Naohiro Suzuki , Tsuyoshi Yamamoto , Toshiyuki Morishita
- 申请人： Naohiro Suzuki , Tsuyoshi Yamamoto , Toshiyuki Morishita
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2007-063371 20070313
- 主分类号： H01L29/24
- IPC分类号： H01L29/24
摘要：
The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.
公开/授权文献
- US07732821B2 Silicon carbide semiconductor device 公开/授权日：2010-06-08
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