发明申请
US20080225577A1 MAGNETIC RANDOM ACCESS MEMORY, AND WRITE METHOD AND MANUFACTURING METHOD OF THE SAME
有权
磁性随机存取存储器及其制造方法及其制造方法
- 专利标题: MAGNETIC RANDOM ACCESS MEMORY, AND WRITE METHOD AND MANUFACTURING METHOD OF THE SAME
- 专利标题(中): 磁性随机存取存储器及其制造方法及其制造方法
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申请号: US12043617申请日: 2008-03-06
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公开(公告)号: US20080225577A1公开(公告)日: 2008-09-18
- 发明人: Keiji HOSOTANI , Yoshiaki Asao , Toshihiko Nagase
- 申请人: Keiji HOSOTANI , Yoshiaki Asao , Toshihiko Nagase
- 优先权: JP2007-060693 20070309
- 主分类号: G11C11/02
- IPC分类号: G11C11/02 ; H01L29/82 ; H01L21/00 ; G11C7/00
摘要:
A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.