发明申请
- 专利标题： Methods of forming a semiconductor device
- 专利标题（中）： 形成半导体器件的方法
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申请号： US12074992申请日： 2008-03-07
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公开(公告)号： US20080227258A1公开(公告)日： 2008-09-18
- 发明人: Sang-Yong Park , Sung-Hyun Kwon , Jae-Hwang Sim , Keon-Soo Kim , Jae-Kwan Park
- 申请人： Sang-Yong Park , Sung-Hyun Kwon , Jae-Hwang Sim , Keon-Soo Kim , Jae-Kwan Park
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR2007-24097 20070312
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/31
摘要：
Methods of forming a semiconductor device include forming a mask layer on a semiconductor substrate. The mask layer has vertically and horizontally extending portions. The vertically extending portions have a thickness selected to provide a desired line width to an underlying structure to be formed using the mask layer and a height greater than a height of the horizontally extending portions. The underlying structure is formed using the mask layer.
公开/授权文献
- US07772069B2 Methods of forming a semiconductor device 公开/授权日：2010-08-10