发明申请
- 专利标题: Transistor and method of manufacturing the same
- 专利标题(中): 晶体管及其制造方法
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申请号: US11987250申请日: 2007-11-28
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公开(公告)号: US20080230853A1公开(公告)日: 2008-09-25
- 发明人: Jae-Eun Jang , Seung-Nam Cha , Jae-Eun Jung , Yong-Wan Jin
- 申请人: Jae-Eun Jang , Seung-Nam Cha , Jae-Eun Jung , Yong-Wan Jin
- 优先权: KR10-2007-0027815 20070321
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
In a transistor and a method of manufacturing the same, the transistor includes a channel layer arranged on a substrate, a source electrode and a drain electrode formed on the substrate so as to contact respective ends of the channel layer, a gate insulating layer surrounding the channel layer between the source electrode and the drain electrode, and a gate electrode surrounding the gate insulating layer.
公开/授权文献
- US07972930B2 Transistor and method of manufacturing the same 公开/授权日:2011-07-05