发明申请
- 专利标题: METHOD OF FABRICATING NANO-WIRE ARRAY
- 专利标题(中): 制作纳米线阵列的方法
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申请号: US11927881申请日: 2007-10-30
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公开(公告)号: US20080233675A1公开(公告)日: 2008-09-25
- 发明人: Hong Yeol Lee , Seung Eon Moon , Eun Kyoung Kim , Jong Hyurk Park , Kang Ho Park , Jong Dae Kim , Gyu Tae Kim , Jae Woo Lee , Hye Yeon Ryu , Jung Hwan Huh
- 申请人: Hong Yeol Lee , Seung Eon Moon , Eun Kyoung Kim , Jong Hyurk Park , Kang Ho Park , Jong Dae Kim , Gyu Tae Kim , Jae Woo Lee , Hye Yeon Ryu , Jung Hwan Huh
- 申请人地址: KR Daejeon-City KR Seoul
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE,KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE,KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION
- 当前专利权人地址: KR Daejeon-City KR Seoul
- 优先权: KR10-2006-0122349 20061205; KR10-2007-0061440 20070622
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.
公开/授权文献
- US07846786B2 Method of fabricating nano-wire array 公开/授权日:2010-12-07