发明申请
- 专利标题： Method of Fabricating a Bipolar Transistor
- 专利标题（中）： 制造双极晶体管的方法
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申请号： US11913049申请日： 2006-04-24
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公开(公告)号： US20080233688A1公开(公告)日： 2008-09-25
- 发明人: Philippe Meunier-Beillard , Erwin Hijzen , Johannes J.T.M. Donkers , Francois Neuilly
- 申请人： Philippe Meunier-Beillard , Erwin Hijzen , Johannes J.T.M. Donkers , Francois Neuilly
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP05103583.0 20050429
- 国际申请： PCT/IB2006/051262 WO 20060424
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/331
摘要：
A method of fabricating a bipolar transistor in a first trench (11) is disclosed wherein only one photolithographic mask is applied which forms a first trench (11) and a second trench (12). A collector region (21) is formed self-aligned in the first trench (11) and the second trench (12). A base region (31) is formed self-aligned on a portion of the collector region (21), which is in the first trench (11). An emitter region (41) is formed self-aligned on a portion of the base region (31). A contact to the collector region (21) is formed in the second trench (12) and a contact to the base region (31) is formed in the first trench (11). The fabrication of the bipolar transistor may be integrated in a standard CMOS process.
公开/授权文献
- US07605027B2 Method of fabricating a bipolar transistor 公开/授权日：2009-10-20
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