发明申请
- 专利标题： METHOD AND APPARATUS FOR PLASMA PROCESSING
- 专利标题（中）： 用于等离子体处理的方法和装置
-
申请号： US11846899申请日： 2007-08-29
-
公开(公告)号： US20080237184A1公开(公告)日： 2008-10-02
- 发明人: MAMORU YAKUSHIJI , Yutaka Ohmoto , Yutaka Kouzuma
- 申请人： MAMORU YAKUSHIJI , Yutaka Ohmoto , Yutaka Kouzuma
- 优先权： JP2007-090407 20070330
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
A plasma processing apparatus comprising a vacuum vessel; a process chamber housed in the vacuum vessel; and a sample stage located in the process chamber, for supporting on its upper surface a disk-like sample to be processed; wherein plural disk-like samples are continuously processed with plasma generated in the process chamber and wherein during the idling time between the successive processes the temperature of the sample stage is adjusted to a predetermined value higher than the temperature at which the samples are processed.
信息查询
IPC分类:
