发明申请
US20080237568A1 Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures
有权
具有受控尺寸的纳米级结构的方法，纳米线结构以及制造纳米线结构的方法
- 专利标题： Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures
- 专利标题（中）： 具有受控尺寸的纳米级结构的方法，纳米线结构以及制造纳米线结构的方法
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申请号： US11730486申请日： 2007-04-02
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公开(公告)号： US20080237568A1公开(公告)日： 2008-10-02
- 发明人: Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
- 申请人： Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/20
摘要：
Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
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