发明申请
US20080237604A1 PLASMA NITRIDED GATE OXIDE, HIGH-K METAL GATE BASED CMOS DEVICE
审中-公开
等离子体氮化物氧化物,高K金属栅基CMOS器件
- 专利标题: PLASMA NITRIDED GATE OXIDE, HIGH-K METAL GATE BASED CMOS DEVICE
- 专利标题(中): 等离子体氮化物氧化物,高K金属栅基CMOS器件
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申请号: US11694419申请日: 2007-03-30
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公开(公告)号: US20080237604A1公开(公告)日: 2008-10-02
- 发明人: Husam Niman Alshareef , Manuel Quevedo-Lopez
- 申请人: Husam Niman Alshareef , Manuel Quevedo-Lopez
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L21/8238
摘要:
In accordance with the invention, there are CMOS devices and semiconductor devices and methods of fabricating them. The CMOS device can include a substrate including a first active region and a second active region and a first transistor device over the first active region, wherein the first transistor device includes a high-K layer over the first active region, a first dielectric capping layer on the high-K layer, and a first metal gate layer over the first dielectric capping layer. The CMOS device can also include a second transistor device over the second active region, wherein the second transistor device includes a high-K layer over the second active region, a second dielectric capping layer on the second high-K layer, and a second metal gate layer over the second dielectric capping layer.