发明申请
- 专利标题: LIGHT EMITTING DEVICE AND MANUFACTURING METHOD
- 专利标题(中): 发光装置及制造方法
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申请号: US12058242申请日: 2008-03-28
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公开(公告)号: US20080237628A1公开(公告)日: 2008-10-02
- 发明人: Eiichi Satoh , Shogo Nasu , Reiko Taniguchi , Masayuki Ono , Masaru Odagiri
- 申请人: Eiichi Satoh , Shogo Nasu , Reiko Taniguchi , Masayuki Ono , Masaru Odagiri
- 优先权: JP2007-091946 20070330; JP2007-091954 20070330
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/00
摘要:
A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron transporting layer.
公开/授权文献
- US07981710B2 Light emitting device and manufacturing method 公开/授权日:2011-07-19