发明申请
US20080238299A1 NANODOT ELECTROLUMINESCENT DIODE OF TANDEM STRUCTURE AND METHOD FOR FABRICATING THE SAME
审中-公开
纳米电极结构的电致发光二极管及其制造方法
- 专利标题: NANODOT ELECTROLUMINESCENT DIODE OF TANDEM STRUCTURE AND METHOD FOR FABRICATING THE SAME
- 专利标题(中): 纳米电极结构的电致发光二极管及其制造方法
-
申请号: US12017677申请日: 2008-01-22
-
公开(公告)号: US20080238299A1公开(公告)日: 2008-10-02
- 发明人: Kyung Sang CHO , Byoung Lyong CHOI , Soon Jae KWON
- 申请人: Kyung Sang CHO , Byoung Lyong CHOI , Soon Jae KWON
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2007-0006725 20070122
- 主分类号: H01J1/62
- IPC分类号: H01J1/62
摘要:
A nanodot electroluminescent diode is disclosed. The nanodot electroluminescent diode comprises a lower electrode, an upper electrode, and unit cells interposed between the electrodes, wherein the unit cells comprise a quantum dot electroluminescent layer and also include an organic layer and/or an inorganic layer in addition to the quantum dot electroluminescent layer. The disclosed nanodot electroluminescent diode provides high efficiency, stability, and high luminance, and mixed colors, multi-colors, full color, and white electroluminescence can be obtained.
信息查询