发明申请
US20080238530A1 Semiconductor Device Generating Voltage for Temperature Compensation
审中-公开
用于温度补偿的半导体器件产生电压
- 专利标题: Semiconductor Device Generating Voltage for Temperature Compensation
- 专利标题(中): 用于温度补偿的半导体器件产生电压
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申请号: US12076991申请日: 2008-03-26
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公开(公告)号: US20080238530A1公开(公告)日: 2008-10-02
- 发明人: Takashi Ito , Naruaki Kiriki , Tadaaki Yamauchi , Minekazu Ono , Tsutomu Nagasawa , Hidehiko Kuge
- 申请人: Takashi Ito , Naruaki Kiriki , Tadaaki Yamauchi , Minekazu Ono , Tsutomu Nagasawa , Hidehiko Kuge
- 专利权人: RENESAS TECHNOLOGY CORP.
- 当前专利权人: RENESAS TECHNOLOGY CORP.
- 优先权: JP2007-084558 20070328; JP2007-088320 20070329; JP2008-029309 20080208
- 主分类号: H01L37/00
- IPC分类号: H01L37/00
摘要:
An input transistor unit includes a first transistor having a control electrode to which a reference voltage is supplied. An output transistor unit includes a diode-connected second transistor. At least one of the input transistor unit and the output transistor unit further includes a third transistor that is diode-connected and connected in series with the corresponding first transistor or the second transistor and outputs a current in the same direction as the corresponding transistor does. The number of transistors included in the input transistor unit and the number of transistors included in output transistor unit are different from each other. The size of transistors included in the input transistor unit differs from that of transistors included in the output transistor unit.
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