发明申请
- 专利标题: Readout of multi-level storage cells
- 专利标题(中): 读出多级存储单元
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申请号: US11731766申请日: 2007-03-30
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公开(公告)号: US20080239833A1公开(公告)日: 2008-10-02
- 发明人: Thomas Nirschl , Jan Otterstedt
- 申请人: Thomas Nirschl , Jan Otterstedt
- 主分类号: G11C7/06
- IPC分类号: G11C7/06
摘要:
A multi-level sensing scheme compares the state of a multi-level storage cell with monotonously changing reference states, which are associated to different information values. That particular information value is identified to be the information stored in the multi-level storage cell, which has associated that reference state which, in a changing direction, firstly exceeds the state.
公开/授权文献
- US07580297B2 Readout of multi-level storage cells 公开/授权日:2009-08-25
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