A manufacturing method of a semiconductor device includes preparing a first semiconductor substrate having a first integrated circuit formed therein and including a plurality of first through substrate vias, and a second semiconductor substrate having a second integrated circuit formed therein and including a plurality of second through substrate vias, forming a solid-electrolytic layer on an upper surface of the first semiconductor substrate, mounting the second semiconductor substrate on the solid-electrolytic layer such that a lower surface of the second semiconductor substrate comes into contact with the solid-electrolytic layer, and applying a voltage between the plurality of first through substrate vias and the plurality of second through substrate vias, to form in the solid-electrolytic layer a plurality of connection electrodes, which are respectively connecting the plurality of second through substrate vias adjacent to the plurality of first through substrate vias to the plurality of first through substrate vias.