发明申请
- 专利标题： ALUMINUM NITRIDE SINTERED BODY AND SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER
- 专利标题（中）： 氮化铝烧结体和半导体制造装置
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申请号： US12054715申请日： 2008-03-25
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公开(公告)号： US20080242531A1公开(公告)日： 2008-10-02
- 发明人: Naomi Teratani , Yuji Katsuda
- 申请人： Naomi Teratani , Yuji Katsuda
- 申请人地址： JP Nagoya-Shi
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JP Nagoya-Shi
- 优先权： JP2007-080697 20070327
- 主分类号： C04B35/00
- IPC分类号： C04B35/00
摘要：
The aluminum nitride sintered body includes at least europium (Eu), aluminum (Al), and oxygen (O). It was found that a grain boundary phase having a peak having a X-ray diffraction profile substantially the same as that of an Sr3Al2O6 phase could be three-dimensionally continued in the aluminum nitride sintered body to realize a lower resistance without damaging various properties unique to aluminum nitride.
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