发明申请
- 专利标题： Semiconductor device including schottky barrier diode and method of manufacturing the same
- 专利标题（中）： 包括肖特基势垒二极管的半导体器件及其制造方法
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申请号： US12078369申请日： 2008-03-31
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公开(公告)号： US20080246096A1公开(公告)日： 2008-10-09
- 发明人: Jun Sakakibara , Hitoshi Yamaguchi
- 申请人： Jun Sakakibara , Hitoshi Yamaguchi
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2007-97416 20070403
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/329 ; H01L29/872
摘要：
A semiconductor device includes a substrate, a plurality of first columns having a first conductivity type, a plurality of second columns having a second conductivity type, a first electrode, and a second electrode. The first columns and the second columns are alternately arranged on the substrate to provide a super junction structure. The first electrode is disposed on the super junction structure, forms schottky junctions with the first columns, and forms ohmic junctions with the second columns. The second electrode is disposed on the substrate on an opposite side of the super junction structure. At least a part of the substrate and the super junction structure has lattice defects to provide a lifetime control region at which a lifetime of a minority carrier is controlled to be short.
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