发明申请
US20080248655A1 DEVELOPMENT OR REMOVAL OF BLOCK COPOLYMER OR PMMA-b-S-BASED RESIST USING POLAR SUPERCRITICAL SOLVENT
有权
使用极性超临界溶剂开发或去除嵌段共聚物或PMMA-b-S基电阻
- 专利标题： DEVELOPMENT OR REMOVAL OF BLOCK COPOLYMER OR PMMA-b-S-BASED RESIST USING POLAR SUPERCRITICAL SOLVENT
- 专利标题（中）： 使用极性超临界溶剂开发或去除嵌段共聚物或PMMA-b-S基电阻
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申请号： US12143445申请日： 2008-06-20
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公开(公告)号： US20080248655A1公开(公告)日： 2008-10-09
- 发明人: Matthew E. Colburn , Dmitriy Shneyder , Shahab Siddiqui
- 申请人： Matthew E. Colburn , Dmitriy Shneyder , Shahab Siddiqui
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; G03C5/00
摘要：
Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
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