发明申请
US20080251850A1 PMD Liner Nitride Films and Fabrication Methods for Improved NMOS Performance
有权
PMD衬里氮化物膜和改进的NMOS性能的制造方法
- 专利标题: PMD Liner Nitride Films and Fabrication Methods for Improved NMOS Performance
- 专利标题(中): PMD衬里氮化物膜和改进的NMOS性能的制造方法
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申请号: US11740426申请日: 2007-04-26
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公开(公告)号: US20080251850A1公开(公告)日: 2008-10-16
- 发明人: Haowen Bu , Rajesh Khamankar , Douglas T. Grider
- 申请人: Haowen Bu , Rajesh Khamankar , Douglas T. Grider
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L27/088
- IPC分类号: H01L27/088
摘要:
Semiconductor devices (102) and fabrication methods (10) are provided, in which a nitride film (130) is formed over NMOS transistors to impart a tensile stress in ail or a portion of the NMOS transistor to improve carrier mobility. The nitride layer (130) is initially deposited over the transistors at low temperature with high hydrogen content to provide a moderate tensile stress in the semiconductor body prior to back-end processing. Subsequent back-end thermal processing reduces the film hydrogen content and causes an increase in the applied tensile stress.