发明申请
- 专利标题： MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME
- 专利标题（中）： 磁阻效应元件和磁阻随机存取存储器
-
申请号： US12047749申请日： 2008-03-13
-
公开(公告)号： US20080253174A1公开(公告)日： 2008-10-16
- 发明人: Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadashi Kai , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- 申请人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadashi Kai , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- 优先权： JP2007-094625 20070330
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L29/82
摘要：
A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.