Invention Application
- Patent Title: PHASE-SHIFTING MASK AND METHOD OF FABRICATING SAME
- Patent Title (中): 相移掩模及其制造方法
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Application No.: US11734163Application Date: 2007-04-11
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Publication No.: US20080254376A1Publication Date: 2008-10-16
- Inventor: Cheng-Ming Lin , Boming Hsu
- Applicant: Cheng-Ming Lin , Boming Hsu
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A phase-shifting mask is fabricated using two separate exposure processes. The mask includes a substrate and a device pattern area above the substrate. The mask has a mask pattern defining boundaries of the device pattern area and an administrative pattern area defining boundaries of the mask pattern.
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