发明申请
- 专利标题： Power Semiconductor Module
- 专利标题（中）： 功率半导体模块
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申请号： US12105553申请日： 2008-04-18
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公开(公告)号： US20080258316A1公开(公告)日： 2008-10-23
- 发明人: Akihiro Tamba , Kazuhiro Suzuki , Koji Sasaki , Shinji Hiramitsu , Hirokazu Inoue
- 申请人： Akihiro Tamba , Kazuhiro Suzuki , Koji Sasaki , Shinji Hiramitsu , Hirokazu Inoue
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 优先权： JP2007-110196 20070419
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.
公开/授权文献
- US07928587B2 Power semiconductor module 公开/授权日：2011-04-19
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