发明申请
US20080265291A1 MOSFET DEVICE INCLUDING A SOURCE WITH ALTERNATING P-TYPE AND N-TYPE REGIONS
有权
包括具有替代P型和N型区域的源的MOSFET器件
- 专利标题： MOSFET DEVICE INCLUDING A SOURCE WITH ALTERNATING P-TYPE AND N-TYPE REGIONS
- 专利标题（中）： 包括具有替代P型和N型区域的源的MOSFET器件
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申请号： US11742363申请日： 2007-04-30
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公开(公告)号： US20080265291A1公开(公告)日： 2008-10-30
- 发明人: Ronghua Zhu , Amitava Bose , Vishnu K. Khemka , Todd C. Roggenbauer
- 申请人： Ronghua Zhu , Amitava Bose , Vishnu K. Khemka , Todd C. Roggenbauer
- 申请人地址： US TX Austin
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/336
摘要：
Apparatus and methods are provided for fabricating semiconductor devices with reduced bipolar effects. One apparatus includes a semiconductor body (120) including a surface and a transistor source (300) located in the semiconductor body proximate the surface, and the transistor source includes an area (310) of alternating conductivity regions (3110, 3120). Another apparatus includes a semiconductor body (120) including a first conductivity and a transistor source (500) located in the semiconductor body. The transistor source includes multiple regions (5120) including a second conductivity, wherein the regions and the semiconductor body form an area (510) of alternating regions of the first and second conductivities. One method includes implanting a semiconductor well (120) including a first conductivity in a substrate (110) and implanting a plurality of doped regions (5120) comprising a second conductivity in the semiconductor well. An area (510) comprising regions of alternating conductivities is then formed in the semiconductor well.