发明申请
US20080265345A1 Method of Forming a Fully Silicided Semiconductor Device with Independent Gate and Source/Drain Doping and Related Device
审中-公开
形成具有独立栅极和源极/漏极掺杂和相关器件的完全硅化半导体器件的方法
- 专利标题: Method of Forming a Fully Silicided Semiconductor Device with Independent Gate and Source/Drain Doping and Related Device
- 专利标题(中): 形成具有独立栅极和源极/漏极掺杂和相关器件的完全硅化半导体器件的方法
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申请号: US12135910申请日: 2008-06-09
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公开(公告)号: US20080265345A1公开(公告)日: 2008-10-30
- 发明人: Shaofeng Yu , Freidoon Mehrad , Jiong-Ping Lu
- 申请人: Shaofeng Yu , Freidoon Mehrad , Jiong-Ping Lu
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L49/00
- IPC分类号: H01L49/00
摘要:
A method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a substrate (the gate stack comprising a polysilicon layer and a blocking layer), and performing an ion implantation into an active region of the substrate adjacent to the gate stack (the blocking layer substantially blocks the ion implantation from the polysilicon layer).