- 专利标题: Nonlithographic Method to Produce Self-Aligned Mask, Articles Produced by Same and Compositions for Same
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申请号: US12164599申请日: 2008-06-30
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公开(公告)号: US20080265415A1公开(公告)日: 2008-10-30
- 发明人: Matthew E. Colburn , Stephen M. Gates , Jeffrey C. Hedrick , Elbert Huang , Satyanarayana V. Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
- 申请人: Matthew E. Colburn , Stephen M. Gates , Jeffrey C. Hedrick , Elbert Huang , Satyanarayana V. Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
- 主分类号: H01L23/52
- IPC分类号: H01L23/52
摘要:
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
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