发明申请
US20080266942A1 Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
有权
具有预读取操作电阻漂移恢复的多电平单元相变存储器件,采用这种器件的存储器系统以及读取存储器件的方法
- 专利标题: Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
- 专利标题(中): 具有预读取操作电阻漂移恢复的多电平单元相变存储器件,采用这种器件的存储器系统以及读取存储器件的方法
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申请号: US12079869申请日: 2008-03-28
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公开(公告)号: US20080266942A1公开(公告)日: 2008-10-30
- 发明人: Chang-Wook Jeong , Gi-Tae Jeong , Hyeong-Jun Kim , Seung-Pil Ko
- 申请人: Chang-Wook Jeong , Gi-Tae Jeong , Hyeong-Jun Kim , Seung-Pil Ko
- 申请人地址: KR Swon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Swon-si
- 优先权: KR10-2007-004206 20070430; KR10-2008-0024517 20080317
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C7/00
摘要:
A memory device comprises a plurality of memory cells, each memory cell comprising a memory cell material that has an initial resistance that is determined in response to an applied programming current in a programming operation, the resistance of the memory cell varying from the initial resistance over a time period following the programming operation, and each memory cell being connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a read operation. A modification circuit modifies the resistance of a memory cell of the plurality of memory cells selected for a read operation to return its resistance to near the initial resistance prior to a read operation of the memory cell.