发明申请
US20080267237A1 Monolithically-Pumped Erbium-Doped Waveguide Amplifiers and Lasers 审中-公开
单片泵浦铒掺杂波导放大器和激光器

  • 专利标题: Monolithically-Pumped Erbium-Doped Waveguide Amplifiers and Lasers
  • 专利标题(中): 单片泵浦铒掺杂波导放大器和激光器
  • 申请号: US12105624
    申请日: 2008-04-18
  • 公开(公告)号: US20080267237A1
    公开(公告)日: 2008-10-30
  • 发明人: Douglas HallMingjun Huang
  • 申请人: Douglas HallMingjun Huang
  • 主分类号: H01S5/026
  • IPC分类号: H01S5/026 H01L33/00
Monolithically-Pumped Erbium-Doped Waveguide Amplifiers and Lasers
摘要:
Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
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