发明申请
- 专利标题： CHEMICALLY DISORDERED MATERIAL USED TO FORM A FREE LAYER OR A PINNED LAYER OF A MAGNETORESISTANCE (MR) READ ELEMENT
- 专利标题（中）： 用于形成自由层或磁铁层（MR）读取单元的密封层的化学物质
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申请号： US11742313申请日： 2007-04-30
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公开(公告)号： US20080268290A1公开(公告)日： 2008-10-30
- 发明人: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- 申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2−x−yMn1+xAl1+y, Co2−x−yMn1+xSi1+y, Co2−x−yMn1+xGe1+y, and Co2−x−yFe1+xSi1+y, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.
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