- 专利标题: Manufacturing method of a semiconductor device
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申请号: US12213779申请日: 2008-06-24
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公开(公告)号: US20080268578A1公开(公告)日: 2008-10-30
- 发明人: Yoshihiko Shimanuki , Masayuki Suzuki
- 申请人: Yoshihiko Shimanuki , Masayuki Suzuki
- 专利权人: Renesas Technology Corporation,Hitachi Yonezawa Electronics Co., Ltd.
- 当前专利权人: Renesas Technology Corporation,Hitachi Yonezawa Electronics Co., Ltd.
- 优先权: JP2001-142164 20010511; JP2002-004435 20020111
- 主分类号: H01L21/56
- IPC分类号: H01L21/56
摘要:
A non-leaded resin-sealed semiconductor device is manufactured by the steps of providing a conductive flat substrate (metal plate) of copper plate or the like, fixing semiconductor elements respectively to predetermined positions on the principal surface of the substrate by an insulating adhesive, electrically connecting electrodes on the surfaces of the semiconductor elements with predetermined partition parts of the substrate separate from the semiconductor elements by conductive wires, forming an insulating resin layer on the principal surface of the substrate to cover the semiconductor elements and wires, selectively removing the substrate from the rear of said substrate to form electrically independent partition parts whereof at least some are external electrode terminals, and selectively removing said resin layer to fragment the device into regions containing the semiconductor elements and the plural partition parts around the semiconductor elements. Thus, there is provided a compact non-leaded semiconductor device having a large number of electrode terminals.
公开/授权文献
- US07459347B2 Manufacturing method of a semiconductor device 公开/授权日:2008-12-02