发明申请
- 专利标题： Conductive structures, non-volatile memory device including conductive structures and methods of manufacturing the same
- 专利标题（中）： 导电结构，包括导电结构的非易失性存储器件及其制造方法
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申请号： US12151033申请日： 2008-05-02
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公开(公告)号： US20080272423A1公开(公告)日： 2008-11-06
- 发明人: Byung-Yong Choi , Kyu-Charn Park , Choong-Ho Lee
- 申请人： Byung-Yong Choi , Kyu-Charn Park , Choong-Ho Lee
- 优先权： KR2007-0043216 20070503
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/44
摘要：
Conductive structures in an integrated circuit device including an integrated circuit substrate and first conductive layer patterns on the substrate. Second conductive layer patterns are on the substrate extending between respective ones of the first conductive layer patterns. Adjacent ones of the first and second conductive layer patterns are on different horizontal planes relative to the substrate to reduce parasitic capacitance therebetween.
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