发明申请
- 专利标题: Photonic crystal device
- 专利标题(中): 光子晶体装置
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申请号: US11898698申请日: 2007-09-14
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公开(公告)号: US20080272859A1公开(公告)日: 2008-11-06
- 发明人: Ushio Sangawa , Tomoyasu Fujishima , Hiroshi Kanno , Kazuyuki Sakiyama
- 申请人: Ushio Sangawa , Tomoyasu Fujishima , Hiroshi Kanno , Kazuyuki Sakiyama
- 申请人地址: JP Osaka
- 专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址: JP Osaka
- 优先权: JP2004-125195 20060421
- 主分类号: H01P3/08
- IPC分类号: H01P3/08
摘要:
A photonic crystal device according to the present invention includes: a first dielectric substrate 104 having a first lattice structure, of which the dielectric constant changes periodically within a first plane; a second dielectric substrate 105 having a second lattice structure, of which the dielectric constant changes periodically within a second plane; and an adjustment device (pivot 303) for changing a photonic band structure, defined by the first and second lattice structures, by varying relative arrangement of the first and second lattice structures. The first and second dielectric substrates 104 and 105 are stacked one upon the other.
公开/授权文献
- US07574098B2 Photonic crystal device 公开/授权日:2009-08-11
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