发明申请
US20080272875A1 "Interleaved Three-Dimensional On-Chip Differential Inductors and Transformers
有权
“Interleaved Three-Dimensional On-Chip Differential Inductors and Transformers”
- 专利标题： "Interleaved Three-Dimensional On-Chip Differential Inductors and Transformers
- 专利标题（中）： “Interleaved Three-Dimensional On-Chip Differential Inductors and Transformers”
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申请号： US11908603申请日： 2006-08-02
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公开(公告)号： US20080272875A1公开(公告)日： 2008-11-06
- 发明人: Daquan Huang , Mau-Chung Frank Chang
- 申请人： Daquan Huang , Mau-Chung Frank Chang
- 国际申请： PCT/US06/30382 WO 20060802
- 主分类号： H01F27/28
- IPC分类号： H01F27/28 ; H01F41/00
摘要：
Interleaved three-dimensional (3D) on-chip differential inductors 110, 120 and transformer 100 are disclosed. The interleaved 3D on-chip differential inductors 110, 120 and transformer 100 make the best use of multiple metal layers in mainstream standard processes, such as CMOS, BiCMOS and SiGe technologies.
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