发明申请
- 专利标题: PLASMA PROCESSING APPARATUS
- 专利标题(中): 等离子体加工设备
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申请号: US12140859申请日: 2008-06-17
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公开(公告)号: US20080277064A1公开(公告)日: 2008-11-13
- 发明人: Sung Ryul KIM
- 申请人: Sung Ryul KIM
- 申请人地址: KR Yongin-Si
- 专利权人: TES CO., LTD.
- 当前专利权人: TES CO., LTD.
- 当前专利权人地址: KR Yongin-Si
- 优先权: KR10-2006-0124763 20061208; KR10-2007-0085561 20070824; KR10-2007-0109448 20071030; KR10-2008-0031042 20080403
- 主分类号: C23F1/00
- IPC分类号: C23F1/00
摘要:
There is provided a plasma processing apparatus including: a chamber; an insulating plate provided in an upper region in the chamber; a ground electrode provided on a sidewall of the chamber and supplied with a ground voltage; and a lower electrode provided in a lower region in the chamber on which a substrate is seated, wherein the lower electrode comprises a plurality of electrodes, and an RF voltage and the ground voltage are alternately supplied to the adjacent two electrodes, respectively.