发明申请
- 专利标题: Vertical Type Nanotube Semiconductor Device
- 专利标题(中): 立式纳米管半导体器件
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申请号: US12179068申请日: 2008-07-24
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公开(公告)号: US20080277646A1公开(公告)日: 2008-11-13
- 发明人: Ki-Nam Kim , Yun-Gi Kim
- 申请人: Ki-Nam Kim , Yun-Gi Kim
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2005-0025368 20050328
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/94
摘要:
A vertical type nanotuhe semiconductor device including a nanotube bit line, disposed on a substrate and in parallel with the substrate and composed of a nanotube with a conductive property, and a nanotube pole connected to the bit line vertically to the substrate and provides a channel through which carriers migrate. By manufacturing the semiconductor device using the bit line composed of the nanotube, cutoff of an electrical connection of the bit line is prevented and an integration density of the semiconductor device can be improved.