发明申请
- 专利标题： MOSFET Having a JFET Embedded as a Body Diode
- 专利标题（中）： 具有JFET嵌入式作为体二极管的MOSFET
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申请号： US12182365申请日： 2008-07-30
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公开(公告)号： US20080277695A1公开(公告)日： 2008-11-13
- 发明人: Jian Li , Daniel Chang , Ho-Yuan Yu
- 申请人： Jian Li , Daniel Chang , Ho-Yuan Yu
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/8232
摘要：
A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.
公开/授权文献
- US08097512B2 MOSFET having a JFET embedded as a body diode 公开/授权日：2012-01-17
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