发明申请
- 专利标题： MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 磁性随机访问存储器及其制造方法
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申请号： US12107955申请日： 2008-04-23
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公开(公告)号： US20080277703A1公开(公告)日： 2008-11-13
- 发明人: Masayoshi Iwayama
- 申请人： Masayoshi Iwayama
- 优先权： JP2007-119332 20070427
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; G11C11/00 ; H01L21/00
摘要：
A magnetic random access memory includes a single tunnel junction element which includes a first fixed layer, a first recording layer, and a first nonmagnetic layer, a double tunnel junction element which includes a second fixed layer and a third fixed layer, a second recording layer, a second nonmagnetic layer formed between the second fixed layer and the second recording layer, and a third nonmagnetic layer formed between the third fixed layer and the second recording layer, and in which the magnetization directions in the second fixed layer and the second recording layer take one of the parallel state and the antiparallel state in accordance with a direction of an electric current flowing between the second fixed layer and the second recording layer, and a transistor connected to a memory cell having the single tunnel junction element and the double tunnel junction element connected in parallel.
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