发明申请
US20080282042A1 Multi-path accessible semiconductor memory device with prevention of pre-charge skip
失效
具有防止预充电跳跃的多路径可访问半导体存储器件
- 专利标题: Multi-path accessible semiconductor memory device with prevention of pre-charge skip
- 专利标题(中): 具有防止预充电跳跃的多路径可访问半导体存储器件
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申请号: US12151946申请日: 2008-05-09
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公开(公告)号: US20080282042A1公开(公告)日: 2008-11-13
- 发明人: Jin-Hyoung Kwon , Han-Gu Sohn , Dong-Woo Lee
- 申请人: Jin-Hyoung Kwon , Han-Gu Sohn , Dong-Woo Lee
- 优先权: KR2007-45864 20070511
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A multiprocessor system includes first and second processors and a multi-path accessible semiconductor memory device including a shared memory area and a pseudo operation execution unit. The shared memory area is accessible by the first and second processors according to a page open policy. The pseudo operation execution unit responds to a virtual active command from one of the first and second processors to close a last-opened page. The virtual active command is generated with a row address not corresponding to any row of the shared memory area. For example, bit-lines of a last accessed row are pre-charged for closing the last-opened page.
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