发明申请
US20080282042A1 Multi-path accessible semiconductor memory device with prevention of pre-charge skip 失效
具有防止预充电跳跃的多路径可访问半导体存储器件

  • 专利标题: Multi-path accessible semiconductor memory device with prevention of pre-charge skip
  • 专利标题(中): 具有防止预充电跳跃的多路径可访问半导体存储器件
  • 申请号: US12151946
    申请日: 2008-05-09
  • 公开(公告)号: US20080282042A1
    公开(公告)日: 2008-11-13
  • 发明人: Jin-Hyoung KwonHan-Gu SohnDong-Woo Lee
  • 申请人: Jin-Hyoung KwonHan-Gu SohnDong-Woo Lee
  • 优先权: KR2007-45864 20070511
  • 主分类号: G06F12/00
  • IPC分类号: G06F12/00
Multi-path accessible semiconductor memory device with prevention of pre-charge skip
摘要:
A multiprocessor system includes first and second processors and a multi-path accessible semiconductor memory device including a shared memory area and a pseudo operation execution unit. The shared memory area is accessible by the first and second processors according to a page open policy. The pseudo operation execution unit responds to a virtual active command from one of the first and second processors to close a last-opened page. The virtual active command is generated with a row address not corresponding to any row of the shared memory area. For example, bit-lines of a last accessed row are pre-charged for closing the last-opened page.
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