发明申请
- 专利标题： Image Sensor and Method for Manufacturing the Same
- 专利标题（中）： 图像传感器及其制造方法
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申请号： US11842787申请日： 2007-08-21
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公开(公告)号： US20080283881A1公开(公告)日： 2008-11-20
- 发明人: MIN HYUNG LEE
- 申请人： MIN HYUNG LEE
- 优先权： KR10-2007-0047885 20070517
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L21/00
摘要：
An image sensor according to one embodiment of the present invention includes a semiconductor substrate having a CMOS circuit formed therein; an interlayer dielectric layer formed on the semiconductor substrate and including a trench formed therein; a metal wiring and a first conductive layer formed within the trench of the interlayer dielectric layer; an intrinsic layer formed on the semiconductor substrate including the first conductive layer and the interlayer dielectric layer; and a second conductive layer formed on the intrinsic layer.
公开/授权文献
- US07700401B2 Image sensor and method for manufacturing the same 公开/授权日：2010-04-20
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