发明申请
- 专利标题： INTEGRATED CIRCUIT INCLUDING A DIELECTRIC LAYER AND METHOD
- 专利标题（中）： 集成电路，包括介质层和方法
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申请号： US12104814申请日： 2008-04-17
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公开(公告)号： US20080283973A1公开(公告)日： 2008-11-20
- 发明人: Lars Oberbeck , Jonas Sundqvist , Lothar Frey , Alejandro Avellan , Stefan Kudelka
- 申请人： Lars Oberbeck , Jonas Sundqvist , Lothar Frey , Alejandro Avellan , Stefan Kudelka
- 申请人地址： DE Muenchen
- 专利权人： QIMONDA AG
- 当前专利权人： QIMONDA AG
- 当前专利权人地址： DE Muenchen
- 优先权： DE102007018013-8 20070417
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/469 ; H05K3/00
摘要：
An integrated circuit including a dielectric layer and a method for producing an integrated circuit. In one embodiment, a dielectric layer is deposited in a process atmosphere. The process atmosphere includes a first starting component at a first point in time, a second starting component at a second point in time and a third starting component at a third point in time. The third starting component includes a halogen.