发明申请
US20080285338A1 DETERMINING HISTORY STATE OF DATA IN DATA RETAINING DEVICE BASED ON STATE OF PARTIALLY DEPLETED SILICON-ON-INSULATOR
失效
根据部分绝缘硅绝缘体的状态确定数据保留装置中数据的历史状态
- 专利标题: DETERMINING HISTORY STATE OF DATA IN DATA RETAINING DEVICE BASED ON STATE OF PARTIALLY DEPLETED SILICON-ON-INSULATOR
- 专利标题(中): 根据部分绝缘硅绝缘体的状态确定数据保留装置中数据的历史状态
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申请号: US12180776申请日: 2008-07-28
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公开(公告)号: US20080285338A1公开(公告)日: 2008-11-20
- 发明人: Kerry Bernstein , Kenneth J. Goodnow , Clarence R. Ogilvie , Sebastian T. Ventrone , Keith R. Williams
- 申请人: Kerry Bernstein , Kenneth J. Goodnow , Clarence R. Ogilvie , Sebastian T. Ventrone , Keith R. Williams
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A system, method and program product for determining a history state of data in a data retaining device are disclosed. A state of a partially-depleted silicon-on-insulator (PD SOI) device coupled to a data retaining device is measured to indicate a body voltage of the PD SOI device. The body voltage of the PD SOI device may indicate, among others, how long the PD SOI device has been idling, which indirectly indicates how long data in the data retaining device has not been accessed. As such, the current invention may be used efficiently with, e.g., a cache replacement algorithm in a management of the data retaining device.
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