发明申请
US20080286185A1 Method of Producing Semiconductor Porcelain Composition 失效
生产半导体瓷组合物的方法

  • 专利标题: Method of Producing Semiconductor Porcelain Composition
  • 专利标题(中): 生产半导体瓷组合物的方法
  • 申请号: US11910222
    申请日: 2006-03-31
  • 公开(公告)号: US20080286185A1
    公开(公告)日: 2008-11-20
  • 发明人: Takeshi ShimadaKoichi TeraoKazuya Toji
  • 申请人: Takeshi ShimadaKoichi TeraoKazuya Toji
  • 优先权: JPP2005-103721 20050331
  • 国际申请: PCT/JP2006/306816 WO 20060331
  • 主分类号: C01F17/00
  • IPC分类号: C01F17/00
Method of Producing Semiconductor Porcelain Composition
摘要:
Problem:To provide a production method of providing a semiconductor porcelain composition which is capable of shifting a Curie temperature in a positive direction with using Pb and has a considerably reduced resistivity at room temperature, and a method of producing a semiconductor porcelain composition which is capable of providing a property uniform to an inner portion of a material even in a material having a comparatively large and thick shape.Means for Resolution:A method of producing a semiconductor porcelain composition represented by a composition formula [(Bi0.5Na0.5)x(Ba1-yRy)1-x]TiO3, in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0
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