发明申请
- 专利标题: MASK HAVING IMPLANT STOPPING LAYER
- 专利标题(中): 掩蔽具有植入物停留层
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申请号: US12145922申请日: 2008-06-25
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公开(公告)号: US20080286545A1公开(公告)日: 2008-11-20
- 发明人: Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
- 申请人: Katherina Babich , Todd C. Bailey , Richard A. Conti , Ryan P. Deschner
- 主分类号: B32B7/02
- IPC分类号: B32B7/02
摘要:
Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.