发明申请
- 专利标题： METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTAL
- 专利标题（中）： 制备三维光子晶体的方法
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申请号： US12119168申请日： 2008-05-12
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公开(公告)号： US20080286892A1公开(公告)日： 2008-11-20
- 发明人: Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
- 申请人： Shinan Wang , Kenji Tamamori , Taiko Motoi , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba
- 申请人地址： JP Tokyo
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-128808 20070515; JP2008-099949 20080408
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; G02B6/10
摘要：
A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.
公开/授权文献
- US07700390B2 Method for fabricating three-dimensional photonic crystal 公开/授权日：2010-04-20
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