发明申请
US20080290356A1 Reflective Layered System Comprising a Plurality of Layers that are to be Applied to a III/V Compound Semiconductor Material
审中-公开
包含要应用于III / V复合半导体材料的多层的反射层状体系
- 专利标题： Reflective Layered System Comprising a Plurality of Layers that are to be Applied to a III/V Compound Semiconductor Material
- 专利标题（中）： 包含要应用于III / V复合半导体材料的多层的反射层状体系
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申请号： US11629582申请日： 2005-06-29
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公开(公告)号： US20080290356A1公开(公告)日： 2008-11-27
- 发明人: Gertrud Krauter , Andreas Plossl , Ralph Wirth , Heribert Zull
- 申请人： Gertrud Krauter , Andreas Plossl , Ralph Wirth , Heribert Zull
- 优先权： DE102004031684.8 20040630; DE102004040277.9 20040819
- 国际申请： PCT/DE2005/001148 WO 20050629
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L29/20
摘要：
The invention describes a method for producing a reflective layer system and a reflective layer system for application to a III/V compound semiconductor material, wherein a first layer, containing phosphosilicate glass, is applied directly to the semiconductor substrate Disposed thereon is a second layer, containing silicon nitride. A metallic layer is then applied thereto.
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