发明申请
- 专利标题: Semiconductor Element
- 专利标题(中): 半导体元件
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申请号: US12126751申请日: 2008-05-23
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公开(公告)号: US20080290466A1公开(公告)日: 2008-11-27
- 发明人: Franz Josef Niedernostheide , Manfred Pfaffenlehner , Hans-Joachim Schulze
- 申请人: Franz Josef Niedernostheide , Manfred Pfaffenlehner , Hans-Joachim Schulze
- 优先权: DE102007024461.6 20070525
- 主分类号: H01L29/866
- IPC分类号: H01L29/866 ; H01L21/329
摘要:
A semiconductor element includes a semiconductor layer having a first doping density, a metallization, and a contact area located between the semiconductor layer and the metallization. The contact area includes at least one first semiconductor area that has a second doping density higher than the first doping density, and at least one second semiconductor area in the semiconductor layer. The second semiconductor area is in contact with the metallization and provides lower ohmic resistance to the metallization than a direct contact between the semiconductor layer and the metallization provides or would provide.
公开/授权文献
- US08035195B2 Semiconductor element 公开/授权日:2011-10-11