发明申请
- 专利标题: Resistive random access memory device and methods of manufacturing and operating the same
- 专利标题(中): 电阻式随机存取存储器件及其制造和操作方法
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申请号: US12149809申请日: 2008-05-08
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公开(公告)号: US20080296550A1公开(公告)日: 2008-12-04
- 发明人: Chang-bum Lee , Young-soo Park , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn
- 申请人: Chang-bum Lee , Young-soo Park , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 优先权: KR10-2007-0052918 20070530; KR10-2008-0020589 20080305
- 主分类号: H01L47/00
- IPC分类号: H01L47/00
摘要:
Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first electrode, at least one second electrode spaced apart from the at least one first electrode, a first structure including a first resistance-changing layer between the at least one first and second electrodes, and a first switching element electrically connected to the first resistance-changing layer, wherein at least one of the first and second electrodes include an alloy layer having a noble metal and a base metal.