发明申请
US20080296708A1 Integrated sensor arrays and method for making and using such arrays
审中-公开
集成传感器阵列和制造和使用这种阵列的方法
- 专利标题： Integrated sensor arrays and method for making and using such arrays
- 专利标题（中）： 集成传感器阵列和制造和使用这种阵列的方法
-
申请号： US11809165申请日： 2007-05-31
-
公开(公告)号： US20080296708A1公开(公告)日： 2008-12-04
- 发明人: Robert Gideon Wodnicki , Wei-Cheng Tian , Kevin Matthew Durocher , Charles Gerard Woychik , Rayette Ann Fisher , Stacey Joy Kennerly , Lowell Scott Smith , Douglas Glenn Wildes
- 申请人： Robert Gideon Wodnicki , Wei-Cheng Tian , Kevin Matthew Durocher , Charles Gerard Woychik , Rayette Ann Fisher , Stacey Joy Kennerly , Lowell Scott Smith , Douglas Glenn Wildes
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 主分类号： H01L21/50
- IPC分类号： H01L21/50 ; H01L23/00
摘要：
The present invention relates to a method for making an integrated sensor comprising providing a sensor array fabricated on a top surface of a bulk silicon wafer having a top surface and a bottom surface, and comprising a plurality of sensors fabricated on the top surface of the bulk silicon wafer. The method further comprises coupling an SOI wafer to the top surface of the bulk silicon wafer, thinning the back surface of the bulk silicon wafer, coupling a plurality of integrated circuit die to the back surface of the bulk silicon wafer, and removing the SOI wafer from the top surface of the bulk silicon wafer.