发明申请
- 专利标题： METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US12059768申请日： 2008-03-31
-
公开(公告)号： US20080299763A1公开(公告)日： 2008-12-04
- 发明人: Akira Ueki , Takeshi Harada , Atsushi Ishii
- 申请人： Akira Ueki , Takeshi Harada , Atsushi Ishii
- 优先权： JP2007-140217 20070528
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap.
公开/授权文献
- US07741228B2 Method for fabricating semiconductor device 公开/授权日：2010-06-22
信息查询
IPC分类:
