发明申请
US20080302296A1 Method and Apparatus for Growing a Ribbon Crystal with Localized Cooling
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用于生长具有局部冷却的带状晶体的方法和装置
- 专利标题： Method and Apparatus for Growing a Ribbon Crystal with Localized Cooling
- 专利标题（中）： 用于生长具有局部冷却的带状晶体的方法和装置
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申请号： US11760542申请日： 2007-06-08
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公开(公告)号： US20080302296A1公开(公告)日： 2008-12-11
- 发明人: Weidong Huang , David Harvey , Richard Wallace , Scott Reitsma
- 申请人： Weidong Huang , David Harvey , Richard Wallace , Scott Reitsma
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B15/10
摘要：
A method of growing ribbon crystal provides a crucible containing molten material, and passes at least two strings through the molten material to produce a partially formed ribbon crystal. The method then directs a fluid to a given portion of the partially formed ribbon crystal to convectively cool the given portion.
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