发明申请
US20080302969A1 THIN-FILM TRANSISTOR ARRAY SUBSTRATE FOR X-RAY DETECTOR AND X-RAY DETECTOR HAVING THE SAME
有权
用于X射线探测器的薄膜晶体管阵列和具有该X射线探测器的X射线探测器
- 专利标题: THIN-FILM TRANSISTOR ARRAY SUBSTRATE FOR X-RAY DETECTOR AND X-RAY DETECTOR HAVING THE SAME
- 专利标题(中): 用于X射线探测器的薄膜晶体管阵列和具有该X射线探测器的X射线探测器
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申请号: US12136398申请日: 2008-06-10
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公开(公告)号: US20080302969A1公开(公告)日: 2008-12-11
- 发明人: Kwan-Wook JUNG , Dae-Ho CHOO
- 申请人: Kwan-Wook JUNG , Dae-Ho CHOO
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2007-0056451 20070611
- 主分类号: H01L31/08
- IPC分类号: H01L31/08 ; G01T1/24
摘要:
In a thin-film transistor (“TFT”) array substrate for an X-ray detector and an X-ray detector having the TFT array substrate, the TFT array substrate includes a gate wiring, a gate insulating layer, an active layer, a data wiring, a photodiode, an organic insulating layer and a bias wiring. The gate wiring is formed on an insulating substrate and includes a gate line and a gate electrode. The gate insulating layer covers the gate wiring. The active layer is formed on the gate insulating layer. The data wiring is formed on the gate insulating layer and includes a data line, source and drain electrodes. The photodiode includes lower and upper electrodes, and a photoconductive layer. The organic insulating layer covers the data wiring and the photodiode. The bias wiring is formed on the organic insulating layer. Thus, an aperture ratio and reliability are enhanced.
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